| Description |
vii, 65 leaves : illustrations ; 29 cm |
| Summary |
"The liquid-vapor and solid-vapor interfacial energies of the system Ga-Al₂O₃ were determined by the sessile drop technique. The interfacial energies were found to decrease with increasing temperature and P[[subscript 0][subscript 2]]. A maximum liquid-vapor interfacial energy of 581 ergs/cm² was found for a clean sessile drop at 1227°C. Values for [Gamma]₀, the excess concentration of oxygen, were calculated for both the liquid-vapor and solid-liquid interfaces. The work of adhesion between molten Ga and Al₂O₃ was found to increase with decreasing P[[subscript 0][subscript 2]] with a maximum of 576 ergs/cm² occurring at 927°C for a P[[superscript 0][subscript 2]] of 10[superscript -22.5]"--Abstract, leaf ii. |
|
