| Description |
v, 76 leaves : illustrations ; 28 cm |
| Summary |
"A transient peak was observed for MOSFET devices when measuring the dynamic capacitance versus applied gate voltage for various configurations at low frequencies. This peak is absent in conventional steady-state ac measurements. Since the peak is also absent in high grade devices and at high frequencies a possible explanation in terms of surface state traps is discussed for the observed phenomena"--Abstract, leaf ii. |
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