Theses/Dissertations
Author Tucker, Marion Wendell, 1940-

Title Dynamic capacitance of metal-oxide-semiconductor field-effect transistors / by Marion Wendell Tucker.

Published 1968.
LOCATION CALL # STATUS
 MST DEPOSITORY  THESIS T 2160 c.2  NOT CHECKED OUT
 MST DEPOSITORY  THESIS T 2160    NOT CHECKED OUT
Description v, 76 leaves : illustrations ; 28 cm
Summary "A transient peak was observed for MOSFET devices when measuring the dynamic capacitance versus applied gate voltage for various configurations at low frequencies. This peak is absent in conventional steady-state ac measurements. Since the peak is also absent in high grade devices and at high frequencies a possible explanation in terms of surface state traps is discussed for the observed phenomena"--Abstract, leaf ii.
Notes M.S. University of Missouri at Rolla 1968.
Vita.
Typescript.
Includes bibliographical references (leaves 71-75).
Subjects Metal oxide semiconductor field-effect transistors.
Electric power system stability.
Semiconductors -- Testing.
Other Titles Dynamic capacitance of metal oxide semiconductor field effect transistors.
MST thesis. Electrical Engineering (M.S., 1968).
OCLC/WorldCat Number 5999790
Author Tucker, Marion Wendell, 1940-
Title Dynamic capacitance of metal-oxide-semiconductor field-effect transistors / by Marion Wendell Tucker.
Subjects Metal oxide semiconductor field-effect transistors.
Electric power system stability.
Semiconductors -- Testing.
Other Titles Dynamic capacitance of metal oxide semiconductor field effect transistors.
MST thesis. Electrical Engineering (M.S., 1968).