| Description |
x, 86 leaves : illustrations ; 29 cm |
| Summary |
"A sessile drop technique employing a drop placement method has been used to investigate the wetting behavior and interfacial phenomena between aluminum and single crystal [alpha]-alumina. Measurements were made under a flowing mixture of H₂ and He atomsphere from 1200°C to 1600°C. Acute contact angles decreased continuously in all cases during the 8-hour experimental time. Neither the oxygen partial pressure of the flowing gas nor the orientation of the single crystal alumina substrate affected the contact angles, but the shapes of crystals grown at the substrate-metal interfaces were dependent on the orientation of the substrate surface to some extent. Indirect evidence showed that Al₂O, the gaseous product of the reaction between Al and Al₂O₃, was responsible for the crystals grown at the substrate-metal interfaces"--Abstract, leaf ii. |
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