| Description |
v, 48 leaves, [45 leaves] : illustrations ; 28 cm. |
| Summary |
"It has not been possible in the past to characterize a transistor or other semiconductor device with regard to its performance in a fast neutron (E>10keV) environment when the device is operated at high (>100 MHz) frequencies. Using the scattering (s-) parameter concept, which regards a device as a two-port "black box", a full characterization of the trends in the neutron bombarded high-frequency performance of a typical transistor can be made. Scattering parameters are not only an accurate means of describing the high-frequency performance of any device, but are now reasonably easily measured with the advent on the market of reliable, highly accurate s-parameter test sets. Methods which exist to permit the rapid design of high-frequency transistor circuits, once the device scattering parameters are known, are reviewed. The effects of neutron bombardment on a high-frequency transistor amplifier are found to be generally enhancing, rather than degrading as expected, if the device is operating near or above the published minimum f[subscript T]"--Abstract, leaf i. |
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